FDG328P datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* −1.5 A, −20 V
* RDS(ON) = 0.145 W @ VGS = −4.5 V
* RDS(ON) = 0.210 W @ VGS = −2.5 V
* Low Gate Charge
* High Performance Trench Technology for Extre.

Application

for a wide range of gate drive voltages (2.5 V
– 12 V). Features
* −1.5 A, −20 V
* RDS(ON) = 0.1.

Description

This P−Channel 2.5 V specified MOSFET is produced in a rugged gate version of ON Semiconductor’s advanced POWERTRENCH process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5 V
– 12.

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